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Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Skordas, S. (Autor:in) / Papadatos, F. (Autor:in) / Consiglio, S. (Autor:in) / Eisenbraun, E. T. (Autor:in) / Kaloyeros, A. E. (Autor:in) / Gusev, E. P. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 20 ; 1536-1543
01.01.2005
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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