A platform for research: civil engineering, architecture and urbanism
Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Electrical properties of ultrathin Al~2O~3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
Skordas, S. (author) / Papadatos, F. (author) / Consiglio, S. (author) / Eisenbraun, E. T. (author) / Kaloyeros, A. E. (author) / Gusev, E. P. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 20 ; 1536-1543
2005-01-01
8 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|British Library Online Contents | 2004
|Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
British Library Online Contents | 2001
|Metalorganic chemical vapor deposition of titanium oxide for microelectronics applications
British Library Online Contents | 2001
|Metalorganic Chemical Vapor Deposition of Oxide Thin Films for Electronic and Optical Applications
British Library Online Contents | 1995
|