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Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Jutarosaga, T. (Autor:in) / Manne, S. (Autor:in) / Seraphin, S. (Autor:in)
APPLIED SURFACE SCIENCE ; 250 ; 168-181
01.01.2005
14 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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