A platform for research: civil engineering, architecture and urbanism
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
Jutarosaga, T. (author) / Manne, S. (author) / Seraphin, S. (author)
APPLIED SURFACE SCIENCE ; 250 ; 168-181
2005-01-01
14 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|British Library Online Contents | 2004
|British Library Online Contents | 1995
|Dual ion beam analysis of boron implanted SiO2/silicon interface
British Library Online Contents | 2003
|Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface
British Library Online Contents | 2003
|