Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation: Fid-Bau Portal

Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Chow, C. F. / Wong, S. P. / Gao, Y. / Ke, N. / Li, Q. / Cheung, W. Y. / Lourenco, M. A. / Homewood, K. P.

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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Chow, C. F. / Wong, S. P. / Gao, Y. / Ke, N. / Li, Q. / Cheung, W. Y. / Lourenco, M. A. / Homewood, K. P.

Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Chow, C. F. / Wong, S. P. / Gao, Y. / Ke, N. / Li, Q. / Cheung, W. Y. / Lourenco, M. A. / Homewood, K. P.

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Titel:

Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Beteiligte:

Chow, C. F. (Autor:in) / Wong, S. P. (Autor:in) / Gao, Y. (Autor:in) / Ke, N. (Autor:in) / Li, Q. (Autor:in) / Cheung, W. Y. (Autor:in) / Lourenco, M. A. (Autor:in) / Homewood, K. P. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 440-443

Erscheinungsdatum:

01.01.2005

Format / Umfang:

4 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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