A platform for research: civil engineering, architecture and urbanism
Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
Chow, C. F. (author) / Wong, S. P. (author) / Gao, Y. (author) / Ke, N. (author) / Li, Q. (author) / Cheung, W. Y. (author) / Lourenco, M. A. (author) / Homewood, K. P. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 440-443
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Optical characterization of b-FeSi2 layers formed by ion beam synthesis
British Library Online Contents | 2004
|British Library Online Contents | 2005
|Growth and morphological properties of b-FeSi2 layers
British Library Online Contents | 2005
|British Library Online Contents | 2011
|Etch pits observation and etching properties of b-FeSi2
British Library Online Contents | 2003
|