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Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane
Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane
Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane
Narita, Y. (Autor:in) / Harashima, M. (Autor:in) / Yasui, K. (Autor:in) / Akahane, T. (Autor:in) / Takata, M. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 3460-3465
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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