Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane
Narita, Y. (Autor:in) / Inubushi, T. (Autor:in) / Yasui, K. (Autor:in) / Akahane, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 212-213 ; 730-734
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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