Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane: Fid-Bau Portal

Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Narita, Y. / Harashima, M. / Yasui, K. / Akahane, T. / Takata, M.

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Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Narita, Y. / Harashima, M. / Yasui, K. / Akahane, T. / Takata, M.

Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Narita, Y. / Harashima, M. / Yasui, K. / Akahane, T. / Takata, M.

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Check availability in my library

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Document information

Title:

Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Contributors:

Narita, Y. (author) / Harashima, M. (author) / Yasui, K. (author) / Akahane, T. (author) / Takata, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 3460-3465

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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