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Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 78-81
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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