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Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal
Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal
Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 88-91
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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