Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy: Fid-Bau Portal

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

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Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

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Titel:

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Beteiligte:

Loke, W. K. (Autor:in) / Yoon, S. F. (Autor:in) / Wicaksono, S. (Autor:in) / Ng, B. K. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 131 ; 40-44

Erscheinungsdatum:

01.01.2006

Format / Umfang:

5 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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