Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy: Fid-Bau Portal

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

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Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Loke, W. K. / Yoon, S. F. / Wicaksono, S. / Ng, B. K.

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Check availability in my library

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Document information

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Document information

Title:

Characteristics of non-annealed l=1.35mm closely lattice-matched GaInNAs/GaAs p-i-n photodetector structures grown by solid-source molecular beam epitaxy

Contributors:

Loke, W. K. (author) / Yoon, S. F. (author) / Wicaksono, S. (author) / Ng, B. K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 131 ; 40-44

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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