Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures
Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures
Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures
Kochowski, S. (Autor:in) / Szydlowski, M. (Autor:in) / Thurzo, I. (Autor:in) / Zahn, D. R. (Autor:in)
APPLIED SURFACE SCIENCE ; 252 ; 7631-7635
01.01.2006
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method
British Library Online Contents | 2004
|British Library Online Contents | 2009
|Negative-bias-temperature-instability in metal-insulator-semiconductor structures
British Library Online Contents | 2004
|BaTiO3 as an insulating layer for InP-based metal-insulator-semiconductor structures
British Library Online Contents | 2001
|British Library Online Contents | 2001
|