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Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate
Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate
Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate
JOURNAL OF MATERIALS SCIENCE AND TECHNOLOGY -SHENYANG- ; 22 ; 651-654
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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