Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate: Fid-Bau Portal

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate

Zhao, L. / Zuo, Y. / Cheng, B. / Yu, J. / Wang, Q.

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Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate

Zhao, L. / Zuo, Y. / Cheng, B. / Yu, J. / Wang, Q.

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate

Zhao, L. / Zuo, Y. / Cheng, B. / Yu, J. / Wang, Q.

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Title:

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si~1~-~xGe~x Layer Epitaxied on Si Substrate

Contributors:

Zhao, L. (author) / Zuo, Y. (author) / Cheng, B. (author) / Yu, J. (author) / Wang, Q. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE AND TECHNOLOGY -SHENYANG- ; 22 ; 651-654

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1005-0302

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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