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A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
Pham, A. T. (Autor:in) / Jungemann, C. (Autor:in) / Nguyen, C. D. (Autor:in) / Meinerzhagen, B. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 224-227
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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