A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs: Fid-Bau Portal

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T. / Jungemann, C. / Nguyen, C. D. / Meinerzhagen, B.

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A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T. / Jungemann, C. / Nguyen, C. D. / Meinerzhagen, B.

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T. / Jungemann, C. / Nguyen, C. D. / Meinerzhagen, B.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Contributors:

Pham, A. T. (author) / Jungemann, C. (author) / Nguyen, C. D. (author) / Meinerzhagen, B. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 224-227

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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