Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Short channel effect improved strained-Si:C-source/drain PMOSFETs
Short channel effect improved strained-Si:C-source/drain PMOSFETs
Short channel effect improved strained-Si:C-source/drain PMOSFETs
Lee, M. H. (Autor:in) / Chang, S. T. (Autor:in) / Maikap, S. (Autor:in) / Shen, K. W. (Autor:in) / Wang, W. C. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6144-6146
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Source/drain engineering for MOSFETs with embedded-Si:C technology
British Library Online Contents | 2008
|Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs
British Library Online Contents | 2004
|pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
British Library Online Contents | 2005
|Improvement of the short channel effect in PMOSFETs using cold implantation
British Library Online Contents | 2016
|Epitaxy of Si:C on Si(001) via methyldichlorosilane
British Library Online Contents | 2013
|