Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs

Shi, Z. / Onsongo, D. / Banerjee, S. K. | British Library Online Contents | 2004

Selective epitaxial growth of SiGe for strained Si transistors

Ning, X. J. / Gao, D. / Bonfanti, P. et al. | British Library Online Contents | 2006

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

Vescan, L. / Stoica, T. / Goryll, M. et al. | British Library Online Contents | 1998

Short channel effect improved strained-Si:C-source/drain PMOSFETs

Lee, M. H. / Chang, S. T. / Maikap, S. et al. | British Library Online Contents | 2008

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T. / Jungemann, C. / Nguyen, C. D. et al. | British Library Online Contents | 2006