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Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process
Evans, L. J. (Autor:in) / Beheim, G. M. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1115-1118
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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