RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate

Katakami, S. / Ono, S. / Arai, M. | British Library Online Contents | 2009

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

Katakami, S. / Ogata, M. / Ono, S. et al. | British Library Online Contents | 2007

The relationship between the resistivity of semi-insulating GaAs and MESFET properties

Miner, C. / Zorzi, J. / Campbell, S. et al. | British Library Online Contents | 1997

Double Implanted Power MESFET Technology in 4H-SiC

Horsfall, A. B. / Ortolland, S. / Wright, N. G. et al. | British Library Online Contents | 2001

Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

Nipoti, R. / Nath, A. / Tian, Y.L. et al. | British Library Online Contents | 2012