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RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate
RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate
RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate
Katakami, S. (Autor:in) / Ono, S. (Autor:in) / Arai, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1107-1110
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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