Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition: Fid-Bau Portal

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Sun, G. S. / Ning, J. / Gong, Q. C. / Gao, X. / Wang, L. / Liu, X. F. / Zeng, Y. P. / Li, J. M.

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Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Sun, G. S. / Ning, J. / Gong, Q. C. / Gao, X. / Wang, L. / Liu, X. F. / Zeng, Y. P. / Li, J. M.

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Sun, G. S. / Ning, J. / Gong, Q. C. / Gao, X. / Wang, L. / Liu, X. F. / Zeng, Y. P. / Li, J. M.

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Titel:

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Beteiligte:

Sun, G. S. (Autor:in) / Ning, J. (Autor:in) / Gong, Q. C. (Autor:in) / Gao, X. (Autor:in) / Wang, L. (Autor:in) / Liu, X. F. (Autor:in) / Zeng, Y. P. (Autor:in) / Li, J. M. (Autor:in) / Devaty, R. P. / Larkin, D. J.

Erschienen in:

Silicon Carbide and Related Materials - 2005 ; 191-194

MATERIALS SCIENCE FORUM ; 527/529

Erscheinungsdatum:

01.01.2006

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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