Homoepitaxial diamond chemical vapor deposition for ultra-light doping

Teraji, T. / Isoya, J. / Watanabe, K. et al. | British Library Online Contents | 2017

Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

Nishitani-Gamo, M. / Sakaguchi, I. / Takami, T. et al. | British Library Online Contents | 1999

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. et al. | British Library Online Contents | 2002

Nitrogen and Bias Effect on Homoepitaxial Diamond Growth by Hot-Filament Chemical Vapor Deposition

Tsai, H.Y. / Chang, C.C. / Wu, C.W. | British Library Online Contents | 2010

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. / Meziere, J. / Kuan, S. W. T. et al. | British Library Online Contents | 2002