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Highly Uniform SiC Epitaxy for MESFET Fabrication

Zhang, J. / Mazzola, J. / Hoff, C. / Rivas, C. / Romano, E. / Casady, J. R. B. / Mazzola, M. S. / Casady, J. B. / Matocha, K. S.

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Highly Uniform SiC Epitaxy for MESFET Fabrication

Zhang, J. / Mazzola, J. / Hoff, C. / Rivas, C. / Romano, E. / Casady, J. R. B. / Mazzola, M. S. / Casady, J. B. / Matocha, K. S.

Highly Uniform SiC Epitaxy for MESFET Fabrication

Zhang, J. / Mazzola, J. / Hoff, C. / Rivas, C. / Romano, E. / Casady, J. R. B. / Mazzola, M. S. / Casady, J. B. / Matocha, K. S.

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Document information

Title:

Highly Uniform SiC Epitaxy for MESFET Fabrication

Contributors:

Zhang, J. (author) / Mazzola, J. (author) / Hoff, C. (author) / Rivas, C. (author) / Romano, E. (author) / Casady, J. R. B. (author) / Mazzola, M. S. (author) / Casady, J. B. (author) / Matocha, K. S. (author) / Devaty, R. P.

Published in:

Silicon Carbide and Related Materials - 2005 ; 195-198

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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