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Recombination Behavior of Stacking Faults in SiC p-i-n Diodes
Recombination Behavior of Stacking Faults in SiC p-i-n Diodes
Recombination Behavior of Stacking Faults in SiC p-i-n Diodes
Maximenko, S. I. (Autor:in) / Pirouz, P. (Autor:in) / Sudarshan, T. S. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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