Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes
Liu, J. Q. (Autor:in) / Skowronski, M. (Autor:in) / Hallin, C. (Autor:in) / Soderholm, R. (Autor:in) / Lendenmann, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1281-1284
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Recombination Behavior of Stacking Faults in SiC p-i-n Diodes
British Library Online Contents | 2006
|Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
British Library Online Contents | 2002
|Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
British Library Online Contents | 2004
|British Library Online Contents | 2005
|Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
British Library Online Contents | 2003
|