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    Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

    New search for: Zhang, Z. H.
    New search for: Shrivastava, A.
    New search for: Sudarshan, T. S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

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    Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

    New search for: Zhang, Z. H.
    New search for: Shrivastava, A.
    New search for: Sudarshan, T. S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

    New search for: Zhang, Z. H.
    New search for: Shrivastava, A.
    New search for: Sudarshan, T. S.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

    Contributors:

    Zhang, Z. H. (author) / Shrivastava, A. (author) / Sudarshan, T. S. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 419-422

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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