High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. et al. | British Library Online Contents | 2009

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Dislocations around precipitates in AlGaN epilayers

Kang, J. / Tsunekawa, S. / Kasuya, A. | British Library Online Contents | 2002

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2012