Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Kamata, I. / Tsuchida, H. / Vetter, W. M. et al. | British Library Online Contents | 2007

Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Kang, J. / Ogawa, T. | British Library Online Contents | 2001

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

Nagano, M. / Kamata, L. / Tsuchida, H. | British Library Online Contents | 2013