High-resolution x-ray topography of dislocations in 4H-SiC epilayers: Fid-Bau Portal

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Kamata, I. / Tsuchida, H. / Vetter, W. M. / Dudley, M.

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High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Kamata, I. / Tsuchida, H. / Vetter, W. M. / Dudley, M.

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Kamata, I. / Tsuchida, H. / Vetter, W. M. / Dudley, M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Contributors:

Kamata, I. (author) / Tsuchida, H. (author) / Vetter, W. M. (author) / Dudley, M. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 22 ; 845-849

Publication date:

2007-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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