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Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
Slow positron beam study of nitrogen implanted CZ-Si subjected to rapid thermal processing
Hao, X. P. (Autor:in) / Yu, R. S. (Autor:in) / Wang, B. Y. (Autor:in) / Chen, H. L. (Autor:in) / Wang, D. N. (Autor:in) / Ma, C. X. (Autor:in) / Wei, L. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 6868-6871
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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