HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, Khushabu S. / Patil, Vilas S. / Khairnar, Anil G. et al. | British Library Online Contents | 2016

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, K. S. / Patil, V. S. / Khairnar, A. G. et al. | British Library Online Contents | 2016

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, Khushabu S. / Patil, Vilas S. / Khairnar, Anil G. et al. | British Library Online Contents | 2016

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Caymax, M. / Van Elshocht, S. / Houssa, M. et al. | British Library Online Contents | 2006

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Cheng, Y. L. / Kao, K. C. / Huang, C. J. et al. | British Library Online Contents | 2015