HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, Khushabu S. / Patil, Vilas S. / Khairnar, Anil G. et al. | British Library Online Contents | 2016

HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

Agrawal, K. S. / Patil, V. S. / Khairnar, A. G. et al. | British Library Online Contents | 2016

Effect of inner oxygen on the interfacial layer formation for HfO2 gate dielectric

Jiang, R. / Xie, E. Q. / Wang, Z. F. | British Library Online Contents | 2007

Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric

Moradi, M. / Nathan, A. / Haverinen, H. M. et al. | British Library Online Contents | 2009

Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

Ray, S. K. / Mahapatra, R. / Maikap, S. et al. | British Library Online Contents | 2004