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Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth
Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth
Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth
Kojima, K. (Autor:in) / Kuroda, S. (Autor:in) / Okumura, H. (Autor:in) / Arai, K. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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