Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth: Fid-Bau Portal

Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth

Kojima, K. / Kuroda, S. / Okumura, H. / Arai, K.

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Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth

Kojima, K. / Kuroda, S. / Okumura, H. / Arai, K.

Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth

Kojima, K. / Kuroda, S. / Okumura, H. / Arai, K.

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Check availability in my library

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Document information

Title:

Effect of Additional Silane on In Situ H~2 Etching prior to 4H-SiC Homoepitaxial Growth

Contributors:

Kojima, K. (author) / Kuroda, S. (author) / Okumura, H. (author) / Arai, K. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 85-88

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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