Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
Cho, S. I. (Autor:in) / Chang, K. (Autor:in) / Kwon, M. S. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 43 ; 406-408
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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