Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
Ahn, C. G. (Autor:in) / Kim, T. Y. (Autor:in) / Yang, J. H. (Autor:in) / Baek, I. B. (Autor:in) / Cho, W. j. (Autor:in) / Lee, S. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 183-186
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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