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A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
Ahn, C. G. (author) / Kim, T. Y. (author) / Yang, J. H. (author) / Baek, I. B. (author) / Cho, W. j. (author) / Lee, S. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 183-186
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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