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Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Kim, S. (Autor:in) / Ham, M. H. (Autor:in) / Lee, J. W. (Autor:in) / Lee, W. (Autor:in) / Myoung, J. M. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 3943-3948
01.01.2008
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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