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Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature
Kim, S. (author) / Ham, M. H. (author) / Lee, J. W. (author) / Lee, W. (author) / Myoung, J. M. (author)
APPLIED SURFACE SCIENCE ; 254 ; 3943-3948
2008-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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