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Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System
Diaz-Reyes, J. (Autor:in) / Galvan-Arellano, M. (Autor:in) / Pena-Sierra, R. (Autor:in) / Marques, A.T. / Silva, A.F. / Baptista, A.P.M. / Sa, C. / Alves, F.J.L. / Malheiros, L.F. / Vieira, M.
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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