Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Patil, V.S. / Agrawal, K.S. / Khairnar, A.G. et al. | British Library Online Contents | 2017

Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Patil, V.S. / Agrawal, K.S. / Khairnar, A.G. et al. | British Library Online Contents | 2017

DFT investigation of HfCl4 decomposition on hydroxylated SiO2: first stage of HfO2 atomic layer deposition

Esteve, A. / Djafari Rouhani, M. / Jeloaica, L. et al. | British Library Online Contents | 2003

Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(100)-2x1: A density functional theory study

Ren, J. / Lu, H. L. / Chen, W. et al. | British Library Online Contents | 2006

Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2x1: A density functional theory study

Ren, J. / Zhou, G. / Hu, Y. et al. | British Library Online Contents | 2009