Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface

Patil, V.S. / Agrawal, K.S. / Khairnar, A.G. et al. | British Library Online Contents | 2017

Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Chesnokov, Y. M. / Miakonkikh, A. V. / Rogozhin, A. E. et al. | British Library Online Contents | 2018

Trends of structural and electrical properties in atomic layer deposited HfO2 films

Scarel, G. / Spiga, S. / Wiemer, C. et al. | British Library Online Contents | 2004

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Li, X. F. / Liu, X. J. / Cao, Y. Q. et al. | British Library Online Contents | 2013

Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Martens, K. / Simoen, E. / De Jaeger, B. et al. | British Library Online Contents | 2006