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    Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

    New search for: Ren, J.
    New search for: Zhou, G.
    New search for: Hu, Y.
    New search for: Jiang, H.
    New search for: Zhang, D. W.

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    Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

    New search for: Ren, J.
    New search for: Zhou, G.
    New search for: Hu, Y.
    New search for: Jiang, H.
    New search for: Zhang, D. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

    New search for: Ren, J.
    New search for: Zhou, G.
    New search for: Hu, Y.
    New search for: Jiang, H.
    New search for: Zhang, D. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

    Contributors:

    Ren, J. (author) / Zhou, G. (author) / Hu, Y. (author) / Jiang, H. (author) / Zhang, D. W. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 7115-7121

    Publication date:

    2008-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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