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Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method
Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method
Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method
Imai, S. (Autor:in) / Mizushima, S. (Autor:in) / Kim, W. B. (Autor:in) / Kobayashi, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 8054-8058
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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