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    Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method

    New search for: Imai, S.
    New search for: Mizushima, S.
    New search for: Kim, W. B.
    New search for: Kobayashi, H.

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    Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method

    New search for: Imai, S.
    New search for: Mizushima, S.
    New search for: Kim, W. B.
    New search for: Kobayashi, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method

    New search for: Imai, S.
    New search for: Mizushima, S.
    New search for: Kim, W. B.
    New search for: Kobayashi, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Properties of thick SiO2/Si structure formed at 120degreeC by use of two-step nitric acid oxidation method

    Contributors:

    Imai, S. (author) / Mizushima, S. (author) / Kim, W. B. (author) / Kobayashi, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 8054-8058

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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