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Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
Palmieri, R. (Autor:in) / Boudinov, H. (Autor:in) / Radtke, C. (Autor:in) / da Silva, E. F. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 706-708
01.01.2008
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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