First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

Courtot-Descharles, A. / Paillet, P. / Leray, J. L. et al. | British Library Online Contents | 2000

Dynamical Simulation of SiO~2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

Ohnuma, T. / Miyashita, A. / Iwasawa, M. et al. | British Library Online Contents | 2007

Dependence of SiO2/Si interface structure on low-temperature oxidation process

Hattori, T. / Azuma, K. / Nakata, Y. et al. | British Library Online Contents | 2004

Proton trapping and diffusion in SiO2 thin films: a first-principles study

Zhang, Q. / Tang, S. / Wallace, R. M. | British Library Online Contents | 2001

Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics

Palmieri, R. / Boudinov, H. / Radtke, C. et al. | British Library Online Contents | 2008